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A New Luminescent Band Induced in NaF by Ion Implantation
Author(s) -
Afonso C. N.,
Gomez I. M.,
Ortiz C.
Publication year - 1987
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221430238
Subject(s) - luminescence , ion , materials science , ion implantation , doping , annealing (glass) , optoelectronics , crystallographic defect , analytical chemistry (journal) , chemistry , crystallography , organic chemistry , chromatography , composite material
High concentrations of defects are induced in a thin surface layer of pure and doped NaF crystals by ion implantation with 280 keV H + , H + 2 , B + , and Ne + ions. Laser induced luminescence in these crystals shows a new band peaking at 750 nm. It presents a high stability under thermal annealing and optical treatments. The experimental results point out that those centers responsible for this emission band are F 2 disturbed centers which are only created under ion implantation.