A New Luminescent Band Induced in NaF by Ion Implantation | Zendy

Afonso C. N. | Zendy; Gomez I. M. | Zendy; Ortiz C. | Zendy

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A New Luminescent Band Induced in NaF by Ion Implantation

Author(s) -

Afonso C. N.,

Gomez I. M.,

Ortiz C.

Publication year - 1987

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221430238

Subject(s) - luminescence , ion , materials science , ion implantation , doping , annealing (glass) , optoelectronics , crystallographic defect , analytical chemistry (journal) , chemistry , crystallography , organic chemistry , chromatography , composite material

High concentrations of defects are induced in a thin surface layer of pure and doped NaF crystals by ion implantation with 280 keV H + , H + 2 , B + , and Ne + ions. Laser induced luminescence in these crystals shows a new band peaking at 750 nm. It presents a high stability under thermal annealing and optical treatments. The experimental results point out that those centers responsible for this emission band are F 2 disturbed centers which are only created under ion implantation.

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