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Alternative Quasi‐Classical Transport Equations. II. Boltzmann's Equation and the Electron Distribution Function for MIS Systems
Author(s) -
Schnittler Ch.,
Scherf S.
Publication year - 1987
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221430137
Subject(s) - boltzmann equation , distribution function , scattering , boundary value problem , function (biology) , physics , boltzmann constant , field (mathematics) , convection–diffusion equation , boundary (topology) , electron , semiconductor device , distribution (mathematics) , interface (matter) , integral equation , statistical physics , classical mechanics , mathematical analysis , mathematics , mechanics , quantum mechanics , materials science , layer (electronics) , bubble , maximum bubble pressure method , evolutionary biology , pure mathematics , composite material , biology
In Part I of this paper a new quasi‐classical formulation of transport equations in the framework of the local‐density approximation is reported including wave function effects due to the potential barrier near an interface. For practical applications to semiconductor devices the non‐equilibrium distribution function of the charge carriers is to be determined. In Part II this problem will be solved for a MIS field effect transistor as a typical example. For this system Boltzmann's equation is formulated and solved in a more general manner than before. The scattering processes in the bulk are considered together with partly diffuse interface scattering which is introduced by means of special boundary conditions. The transport properties of the MIS field effect transistor will be calculated later in Part III of this paper.