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Photoinduced Recharging Phenomena and Vanadium‐Related Centres in GaAs:V
Author(s) -
Ulrici W.,
Kreissl J.,
Vasson A.,
Vasson A. M.,
EnNaqadi M.
Publication year - 1987
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221430121
Subject(s) - electron paramagnetic resonance , vanadium , photoionization , absorption (acoustics) , conduction band , electron , materials science , chemistry , analytical chemistry (journal) , atomic physics , ion , nuclear magnetic resonance , physics , ionization , inorganic chemistry , chromatography , composite material , organic chemistry , quantum mechanics
Photoinduced recharging phenomena are studied at low temperatures ( T < 80 K) on n‐type and semi‐insulating GaAs:V by optical absorption, C‐EPR, and TD‐EPR. Illumination with hv exc > > 1.05 eV into the photoionization absorption α II excites electrons into the conduction band and the recharging V Ga 3++ e ecb → V Ga 2+takes place monitored by optical absorption and EPR. The centre responsible for α II appears to be a V‐containing complex of unknown structure, rechargable under illumination from (V–X) into (V–X) + . The V 2+ (II) centre measured by TD‐EPR is shown to be a second V‐containing complex different from (V–X). The interpretation of all experiments does not require a V‐related mid‐gap level.
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