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On Field Emission from Ultrathin Films of Semiconductors with Effects of Image Forces
Author(s) -
Bose M. K.,
Majumdar C.,
Maity A. B.,
Chakravarti A. N.
Publication year - 1987
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221430113
Subject(s) - quantization (signal processing) , degenerate energy levels , semiconductor , field electron emission , materials science , field (mathematics) , condensed matter physics , optoelectronics , physics , quantum mechanics , mathematics , electron , algorithm , pure mathematics
An attempt is made to investigate the effects of size quantization on field emission from ultrathin films of degenerate wide‐gap semiconductors, taking the image force into consideration. It is noted, taking n‐type GaAs as an example, that size quantization enhances the field emission by several orders of magnitude as compared to that of bulk specimens. Such quantization also leads to oscillatory behavior of the emission with changing film thickness and to a significant dependence of the emission on field strength and carrier concentration.