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Mobility Edges for Interacting Electrons Based on Hubbard's Alloy Analogy
Author(s) -
Kolley E.,
Kolley W.
Publication year - 1987
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221420218
Subject(s) - randomness , coherent potential approximation , gaussian , analogy , phase diagram , electron , statistical physics , enhanced data rates for gsm evolution , plane (geometry) , condensed matter physics , physics , alloy , mathematics , phase (matter) , quantum mechanics , electronic structure , geometry , materials science , computer science , telecommunications , linguistics , statistics , philosophy , composite material
With respect to localization the interacting electron system in disordered alloys A c B 1− c is studied within the random Hubbard model by means of the alloy analogy approximation. The dc conductivity affected by localization is calculated, at T = 0 and d = 3, in the framework of a four (two genuine, two fictitious)‐component CPA (coherent potential approximation). Extensive numerical results are presented for an open mobility‐edge trajectory, conductivities, and a phase diagram on the disorder‐interaction plane, typifying the discrete probability distribution. Significant differences to results of other approaches based upon continuous, rectangular or Gaussian randomness are pointed out.