Premium
4f Optical Absorption Model in Rare‐Earth Semiconducting Compounds
Author(s) -
Parlebas J. C.,
Chetouane K.,
Hugel J.
Publication year - 1987
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221420132
Subject(s) - absorption (acoustics) , rare earth , dielectric , dielectric function , simple (philosophy) , function (biology) , materials science , optoelectronics , condensed matter physics , computational physics , optics , physics , metallurgy , philosophy , epistemology , evolutionary biology , biology
The effect is explored of a local attractive 4f hole potential U fd on the contribution to the optical absorption from electronic 4f → 5d transitions in SmS‐type compounds. After formulating the problem of the imaginary part of the dielectric function in a general manner, a simple numerical study of a two band model is presented to illustrate the essential U fd effect and to make some qualitative contact with available data on the metallic and semiconducting phases of SmS.