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Interaction of Semiconductors with a Strong Resonance Electromagnetic Field
Author(s) -
Kruglov V. I.
Publication year - 1987
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221420117
Subject(s) - hamiltonian (control theory) , semiconductor , electromagnetic field , physics , field (mathematics) , resonance (particle physics) , relaxation (psychology) , electron , statistical physics , energy spectrum , quantum mechanics , quantum electrodynamics , classical mechanics , condensed matter physics , mathematics , psychology , mathematical optimization , social psychology , pure mathematics
A procedure is developed of constructing an effective Hamiltonian, which makes it possible to reduce the nonstationary problem of interaction between a semiconductor and a strong resonance electromagnetic field to a corresponding problem of equilibrium statistical mechanics. Criteria are obtained when the proposed approach is valid. A corresponding effective Hamiltonian has been found taking into account the electron and hole acceleration by the field as well as different relaxation processes, which permits the investigation of both, the energy spectrum of a semiconductor in a strong field and its thermodynamical properties.