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Effect of Size Quantization on Field Emission from Ultrathin Films of Degenerate Wide‐Gap Semiconductors
Author(s) -
Majumdar C.,
Bose M. K.,
Maity A. B.,
Chakravarti A. N.
Publication year - 1987
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221410210
Subject(s) - quantization (signal processing) , degenerate energy levels , semiconductor , materials science , field electron emission , band gap , condensed matter physics , optoelectronics , physics , quantum mechanics , mathematics , electron , algorithm
An attempt is made to investigate the effects of size quantization on the field emission from ultrathin films of degenerate wide‐gap semiconductors. It is found, taking n‐type GaAs as an example, that the presence of size quantization increases the field emission by several orders of magnitude as compared to that from bulk specimens of the same semiconductor. Under such quantization, the field emission may also show oscillatory behavior with decreasing film thickness, and is further found to be strongly dependent on the field strength and the carrier concentration.