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Effect of Back‐Surface Reflection on the Electroreflectance Spectra of GaAs
Author(s) -
Behn U.,
Röppischer H.
Publication year - 1987
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221410132
Subject(s) - reflection (computer programming) , spectral line , semiconductor , doping , field (mathematics) , reflectivity , absorption (acoustics) , materials science , electronic band structure , exponential function , condensed matter physics , surface (topology) , energy (signal processing) , computational physics , optics , atomic physics , molecular physics , chemistry , physics , optoelectronics , quantum mechanics , mathematics , geometry , mathematical analysis , computer science , pure mathematics , programming language
A detailed study of the influence of back‐surface reflection on electroreflectance spectra arising in an additional low‐energy peak is performed. Spectra with and without back reflection are measured on GaAs samples with various doping concentrations. First quantitative calculations on the basis of band‐to‐band related electroabsorption (Franz‐Keldysh effect) including field inhomogeneity reproduce the characteristic features and dependences of the experimental spectra. A new method for estimating the characteristic energy E 0 of the exponential absorption tail of semiconductors is suggested.