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Electronic Properties of Amorphous Semiconductors. Lattice Topology Effects
Author(s) -
Latgé A.,
Makler S. S.,
Anda E. V.
Publication year - 1987
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221410114
Subject(s) - dangling bond , condensed matter physics , lattice (music) , hamiltonian (control theory) , amorphous solid , diamond cubic , materials science , semiconductor , renormalization , electronic structure , topology (electrical circuits) , physics , diamond , mathematics , quantum mechanics , crystallography , chemistry , combinatorics , acoustics , mathematical optimization , composite material , hydrogen
The influence is studied of the lattice topology in the electronic properties of a tetrahedrally bonded amorphous semiconductor, typically a‐Si. The system is described by a nearest neighbour tight‐binding Hamiltonian, defined on a pseudolattice. The topology corresponding to the perfect gasket defined using hexagons as its basic structure is similar to the crystalline diamond lattice. The continuum random network is simulated by generating vacancies in the gasket lattice where dangling bonds are eliminated by saturation. The electronic density of states and the ring statistics of the disorder lattice are studied using a real space renormalization technique within the context of the Green function formalism.