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Modifications of the hopping conductivity due to long‐range coulomb interactions
Author(s) -
Goedsche F.
Publication year - 1987
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221400123
Subject(s) - coulomb , condensed matter physics , variable range hopping , amorphous solid , dielectric , conductivity , limiting , range (aeronautics) , semiconductor , amorphous semiconductors , coulomb's constant , electrical resistivity and conductivity , density of states , materials science , physics , quantum mechanics , chemistry , coulomb barrier , electron , crystallography , mechanical engineering , composite material , engineering
Abstract The conductivity law derived by Efros and Shklovskii for variable‐range hopping (VRH) in the presence of long‐range Coulomb interaction is modified to take into account new numerical results for the density of single‐particle states (DOS) within the Coulomb gap. The characteristic temperatures appearing in this modified VRH law, including limiting temperatures for the applicability of VRH, are expressed in terms of DOS parameters, localization length and dielectric constant. The results are compared with experimental studies in crystalline and amorphous semiconductors.