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Ohmic Mobility of Quasi‐One‐Dimensional Semiconducting Structures. Acoustic and Piezoelectric Phonon Scattering
Author(s) -
Comas F.,
Giner C. Trallero,
Tutor J.
Publication year - 1987
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221390211
Subject(s) - condensed matter physics , ohmic contact , piezoelectricity , phonon , relaxation (psychology) , scattering , materials science , phonon scattering , momentum (technical analysis) , physics , optics , acoustics , nanotechnology , psychology , social psychology , finance , layer (electronics) , economics
Momentum relaxation times and ohmic mobilities are calculated for a quasi‐one‐dimensional (QID) semiconducting system assuming that carriers are scattered by acoustic and piezoelectric phonons. A detailed discussion of inter‐sub‐band transitions is done with special emphasis on the conditions where size‐quantum‐limit (SQL) is accomplished. A comparison of the acoustic and piezoelectric mechanisms is done for GaAs and CdS with detailed analysis of which mechanism dominates transport under given conditions. The temperature dependence of the mobilities is also discussed and asymptotic analytical expressions are obtained for the low temperature regime.