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Vibrational Properties of Hydrogen in Proton‐Implanted Silicon
Author(s) -
Tatarkiewicz J.,
Winer K.
Publication year - 1987
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221390208
Subject(s) - silicon , deuterium , impurity , hydrogen , ion , materials science , cluster (spacecraft) , infrared spectroscopy , proton , infrared , molecular vibration , atomic physics , molecular physics , chemistry , optoelectronics , molecule , optics , physics , organic chemistry , nuclear physics , computer science , programming language
Some aspects of the infrared absorption spectra of crystalline silicon containing implanted hydrogen or deuterium are interpreted on the basis of simple atomic cluster calculations. It is shown that the vibrational properties of the implanted ions can be understood solely by taking into account the effect of the host silicon network on the local impurity vibrations.