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Effect of Pressure on the Luminescence of Trapped Excitons in Xe Crystals
Author(s) -
Kink R.,
Kalder K.,
Lôhmus A.,
Niedrais H.
Publication year - 1987
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221390132
Subject(s) - luminescence , exciton , vacancy defect , atomic physics , materials science , intensity (physics) , chemistry , molecular physics , condensed matter physics , crystallography , physics , optoelectronics , optics
At 115 to 130 K, where the concentration of vacancies in solid Xe is in thermodynamical equilibrium, the intensities of two luminescence bands at 7.2 (A) and 7.6 eV (B) are investigated for Xe crystals under 70 at pressure or without any excess pressure. The decrease of the band A intensity compared to that of the band B is in reasonable agreement with the decrease of the vacancy concentration under an excess pressure. The results confirm an earlier suggestion that the band A originates from excitons trapped at vacancies, whereas the band B is due to self‐trapped excitons.