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Quantum Theory of Thermopower in Quasi‐Two‐Dimensional Semiconductor Quantum Well Structures
Author(s) -
Kubakaddi S. S.,
Mulimani B. G.,
Jali V. M.
Publication year - 1987
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221390125
Subject(s) - seebeck coefficient , condensed matter physics , quantum well , physics , perpendicular , density matrix , quantum , boltzmann equation , semiconductor , plane (geometry) , boltzmann constant , quantum mechanics , thermoelectric effect , mathematics , geometry , laser
A quantum‐mechanical theory for the thermopower in quasi‐two‐dimensional semiconductor quantum well structures, using the density matrix approach, is developed. Expressions for thermopower are obtained, both, when the temperature gradient is applied parallel and perpendicular to the plane of the layer forming the quantum well. The expressions obtained for the longitudinal configuration agree with those obtained from the conventional Boltzmann transport equation in relaxation time approximation.