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The Electronic Heterogeneous States in Ferroelectric Semiconductors
Author(s) -
Egorov B. V.,
Egorova I. B.,
Krivoglaz M. A.
Publication year - 1987
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221390115
Subject(s) - ferroelectricity , polarization (electrochemistry) , condensed matter physics , curie temperature , semiconductor , materials science , amplitude , phase diagram , phase transition , magnetic semiconductor , phase (matter) , chemistry , physics , optics , quantum mechanics , optoelectronics , ferromagnetism , dielectric
The thermodynamically stable heterogeneous states (HS) are considered in ferroelectric semiconductors in which polarization and carrier concentration are self‐consistently dependent on the coordinates. These HS are shown to be thermodynamically favoured at carrier concentrations n being larger than the critical one and especially in a temperature range close to the Curie point of the second order phase transition. An investigation is made of the conditions for the formation of these HS, the phase diagram in variables T, n , and the characteristics: the values of periods (connected with the screennig length), the amplitudes of the carrier concentration and the polarization variations, and the coordinate dependence of the polarization. Depending on the parameters two types of the HS are possible: one with domains separated by sharp walls and the other with smooth wavelike polarization.