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IR Spectroscopy and Structure of RF Magnetron Sputtered a‐SiC:H Films
Author(s) -
Rübel H.,
Schröder B.,
Fuhs W.,
Krauskopf J.,
Rupp T.,
Bethge K.
Publication year - 1987
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221390111
Subject(s) - materials science , amorphous solid , sputter deposition , absorption spectroscopy , infrared spectroscopy , silicon carbide , analytical chemistry (journal) , argon , silicon , absorption (acoustics) , carbon fibers , hydrogen , amorphous silicon , sputtering , crystallography , crystalline silicon , thin film , chemistry , composite number , optoelectronics , optics , nanotechnology , metallurgy , composite material , physics , organic chemistry , chromatography
Amorphous hydrogenated silicon carbide (a‐SiC:H) films are prepared by magnetron sputtering of crystalline silicon in an argon—hydrogen—methane atmosphere. The specific absorption modes (wagging, rocking, deformation, stretching) of the SiC, (CH m ) n C/Si( n = 1, 2, 3; m = 2, 3), and SiH m −( m = 1,2) groups are assigned and analyzed. The composition of the films is determined by nuclear reaction techniques. Structural, electrical, and optical properties of the films show characteristic changes near an alloy composition of a‐Si 1− x C x :H, x = 0.5 which indicate the transition to a structure with threefold coordinated carbon. For x ⪆ 0.75 in the infrared absorption spectra an absorption band is identified which arises from graphitic constituents.