Premium
A Contribution to the Theoretical Interpretation of the UPS Spectra of Monoatomic Adsorption of Oxygen on the Si (111) Surface
Author(s) -
Karpushin A. A.,
Sorokin A. N.,
Semenova I. Yu.,
Tomášek M.
Publication year - 1987
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221390110
Subject(s) - dangling bond , monatomic gas , adsorption , monolayer , silicon , spectral line , oxygen , atom (system on chip) , chemical physics , chemistry , vacancy defect , computational chemistry , materials science , crystallography , physics , nanotechnology , quantum mechanics , organic chemistry , computer science , embedded system
A calculation is performed of the early stage of adsorption of atomary oxygen on the Si (111) surface in the on‐atom (top) position, saturating the dangling bond of the surface silicon atom. By considering the possible presence of a vacancy in the adsorbed oxygen monolayer, it is shown that the basic features of the experimental energy spectrum can be obtained without resorting to the idea of the existence of SiOSi bridge structures on the surface. Nevertheless, the results obtained do not contradict such an idea, nor the idea that the early stage of adsorption corresponds to a molecular form with a peroxide bridge formation. They merely suggest the possibility of an alternative early stage adsorption model. The method of calculation is the recently introduced generalized cluster Bethe‐lattice method.