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Localization Effect of Electrons in the InP–SiO 2 Interface
Author(s) -
Erwang Mao,
Hungrei Zhang,
Weiyuan Wang,
Liang Ye,
Guoping Fang
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221380239
Subject(s) - magnetoresistance , condensed matter physics , electron , weak localization , scattering , conductance , materials science , conductivity , range (aeronautics) , polar , electron scattering , inelastic scattering , electron mobility , chemistry , physics , magnetic field , optics , quantum mechanics , composite material , astronomy
A research on the conductivity of the InP‐SiO 2 interface reveals a localization effect related to long‐range fluctuations of the surface potential. The investigation of the negative magnetoresistance effect shows that the inelastic scattering interactions of electron–electron and electron–polar optic phonon play an important role in the InP interface and obviously affect the negative magnetoresistance. Interaction between electrons is decisively important in activated localization conductance and Mott's mobility edge model is the limit of the model obtained by neglecting the interaction.