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Density of States and Photoconductivity of Hydrogenated Amorphous Silicon
Author(s) -
Terekhov V. A.,
Trostyanskii S. N.,
Domashevskaya E. P.,
Golikova O. A.,
Mezdrogina M. M.,
Sorokina K. L.,
Kazanin M. M.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221380229
Subject(s) - photoconductivity , amorphous silicon , valence band , materials science , density of states , silicon , amorphous solid , saturation (graph theory) , hydrogen , valence (chemistry) , conductivity , condensed matter physics , analytical chemistry (journal) , band gap , optoelectronics , crystalline silicon , crystallography , chemistry , physics , mathematics , organic chemistry , combinatorics , chromatography
The results of the investigation of hydrogenated amorphous silicon films by ultrasoft X‐ray spectroscopy are compared with the measurements of photoconductivity on the same samples. It is shown that the saturation of amorphous silicon by hydrogen causes a decrease of the localized states density just above the valence band top which leads to the rise in photoconductivity. As a result, a maximum in the density of localized states clearly reveals itself at 1 eV above the top of the valence band providing n‐type conductivity.