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Electron Energy Levels in GaAs/Ga 1– x Al x As Heterojunctions II. Optical Properties
Author(s) -
Godwin V. E.,
Tomak M.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221370223
Subject(s) - heterojunction , photoionization , chemistry , oscillator strength , impurity , dipole , optoelectronics , atomic physics , condensed matter physics , materials science , physics , ionization , quantum mechanics , ion , organic chemistry , spectral line
The oscillator strength for electric‐dipole transitions and the photoionization cross‐section of impurities in GaAs/Ga 1– x Al x As heterojunctions are calculated.
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