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Absorption Edge of SnSe
Author(s) -
Lukeš F.,
Schmidt E.,
Humlíček J.,
Dub P.,
Kosek F.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221370218
Subject(s) - absorption edge , crystallography , cleavage (geology) , materials science , absorption (acoustics) , interpretation (philosophy) , single crystal , enhanced data rates for gsm evolution , condensed matter physics , chemistry , band gap , physics , optoelectronics , telecommunications , fracture (geology) , computer science , composite material , programming language
The absorption of SnSe single crystal is studied near the absorption edge at 95 and 295 K in polarized light for ϵ | a and ϵ | b , where a and b are crystallographic axes within the cleavage plane. Two indirect transitions (0.907 and 1.01 eV at 295 K) are identified for both orientations and a first direct transition for ϵ | b with E 0d = 1.051 eV and for ϵ | a with E 1d = 1.236 eV as well, all at 295 K. The temperature coefficients of all transitions are determined also within the range of 95 to 295 K. Also is suggested the interpretation of these results considering the band structure of SnSe given in the literature.