Premium
X‐Ray Electron Charge Density Distribution in Silicon
Author(s) -
Pietsch U.,
Tsirelson V. G.,
Ozerov R. P.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221370204
Subject(s) - electron density , charge density , silicon , x ray , valence (chemistry) , atomic physics , electron , scattering , valence electron , fourier transform , amplitude , electron scattering , physics , materials science , molecular physics , chemistry , optics , nuclear physics , quantum mechanics , optoelectronics
During the last two years new highly accurate X‐ray structure amplitudes for silicon are published. Also the scattering phases of some „forbidden” reflections are determined using the X‐ray threebeam case. This allows the construction of most precise valence and difference electron density plots and the comparision with those calculated on the basis of the Aldret‐Hart X‐ray pendellösung data and by theory. The density plots are discussed in details of both, the bond and the atomic site. The contributions of various Fourier components and the influence of different temperature factors on the difference density are studied.