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Structural Disorder Model for Amorphous Semiconductors: a‐Se
Author(s) -
Vaid B. A.,
Sharma K. C.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221370203
Subject(s) - amorphous semiconductors , amorphous solid , dangling bond , semiconductor , materials science , enhanced data rates for gsm evolution , crystallographic defect , condensed matter physics , thermodynamics , statistical physics , crystallography , physics , chemistry , metallurgy , computer science , silicon , telecommunications , optoelectronics
The structural disorder model, recently proposed by the authors, for amorphous semiconductors is generalized for Se within the framework of the concept of charged dangling bond (CDB) defects, packing fraction, thermodynamic theory of defects, and the additive approximation near the crystalline to amorphous transition which is interpreted as a point of spontaneous production of CDB defects. The model is able to explain at least qualitatively the data on thermodynamic properties, the structural disorder parameter X representing the ratio 〈 U 2 〉 x /〈 U 2 〉 0 , and the width of the Urbach absorption edge E 0 ( T , X ).