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Electron Energy Levels in GaAs/Ga 1− x Al x As Heterojunctions
Author(s) -
Tomak M.,
Godwin V. K.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221370120
Subject(s) - heterojunction , materials science , energy (signal processing) , electron , optoelectronics , physics , quantum mechanics
A theoretical study of the subband structure and impurity related levels in GaAs/Ga 1− x Al x As heterojunction is given.
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