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Theory of Free‐Carrier Infrared Absorption in GaAs
Author(s) -
Klelnert P.,
Giehler M.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221360246
Subject(s) - plasmon , phonon , scattering , ionized impurity scattering , electron , absorption (acoustics) , impurity , random phase approximation , condensed matter physics , phonon scattering , free carrier absorption , ionization , materials science , atomic physics , chemistry , physics , optics , optoelectronics , ion , doping , organic chemistry , quantum mechanics , composite material
Free‐carrier infrared absorption spectra in GaAs are calculated for carrier scattering on ionized impurities and phonons due to Coulomb, Fröhlich, and deformation potential interaction. Starting from the Kubo formula and applying the diagram technique the interactions of electrons with electrons, phonons, and ionized impurities are taken into account in the random phase approximation (RPA). The obtained absorption spectra exhibit coupled plasmon‐phonon peaks which collapse for vanishing electron‐LO phonon interaction. By taking into account only plasmon and screening effects of the electron gas the calculated absorption spectra show plasmon bands in the case of carrier‐ionized impurity scattering and both, a LO phonon emission edge and weak plasmon‐LO phonon combination peaks in the case of carrier‐LO phonon scattering. The scattering of electrons by acoustic phonons is not influenced by plasmons. The dependences of various carrier scattering mechanisms on frequency, temperature, and material parameters are determined for n‐GaAs.