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Non‐Monotonous Behaviour of the Nernst‐Ettingshausen Effect in Conductive Films in a Strong Magnetic Field
Author(s) -
Askerov B. M.,
Kuliev B. I.,
Figarova S. R.,
Eminov R. F.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221360243
Subject(s) - condensed matter physics , scattering , nernst equation , mean free path , carrier scattering , thermal conduction , electron , magnetic field , oscillation (cell signaling) , materials science , charge carrier , physics , optics , chemistry , quantum mechanics , electrode , composite material , biochemistry
The Nernst‐Ettingshausen effect is studied in thin conductive films in a strong transverse magnetic field. The expression is obtained for the NE coefficient Q for arbitrary charge carrier statistics and film thickness, assuming dimensional quantization and piezo‐acoustic phonon scattering. It is shown that in the case of films with degenerate electron gas the NE coefficient oscillates with the variation of the thickness of the film d . The oscillation period is determined as a function of the concentration of the conduction electrons. Taking account of the surface scattering a detailed analysis of the NE coefficient dependence on the film thickness is given including films of thickness comparable to the mean free path of the charge carriers. Computer calculations show that under these conditions the function Q( d ) is non‐monotonous as well.