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A Theoretical Study of the Semiinsulating Behaviour of Fe in InP
Author(s) -
Khowash P. K.,
Singh Vijay A.,
Khan D. C.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221360240
Subject(s) - impurity , semiconductor , condensed matter physics , materials science , band gap , charge (physics) , transition metal , chemistry , optoelectronics , physics , quantum mechanics , biochemistry , organic chemistry , catalysis
The transition metal impurities introduce levels deep in the band gap of the host semiconductor. For neutral Fe in InP the impurity level is exactly in the mid gap and this provides a clue to its semiinsulating behaviour. A detailed MS X α SCF calculation of the different charge states of Fe in InP is presented. The agreement with the experimental results is satisfactory and shows the promise of the method for the analysis of impurities in semiconductors. The Mössbauer isomer shift for the different charge states of Fe in InP are also calculated.