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Metal‐Insulator Transition in Titanium Disulphide Crystals
Author(s) -
Das B.,
Bartwal K. S.,
Srivastava O. N.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221360140
Subject(s) - materials science , amorphous solid , seebeck coefficient , van der waals force , metal–insulator transition , titanium , transition metal , condensed matter physics , electrical resistivity and conductivity , diffraction , atmospheric temperature range , metal , crystallography , chemistry , thermal conductivity , thermodynamics , metallurgy , molecule , physics , composite material , organic chemistry , biochemistry , optics , quantum mechanics , catalysis
A temperature induced metal (M) → insulator (I) transition is investigated which is possibly first of its kind in the titanium rich titanium disulphide crystals confirming to the composition Ti 1 .17S 2 . This transition is established by monitoring the temperature dependence of the electrical conductivity and the thermoelectric power. The structural characteristics at room temperature and at high temperatures (≈ 573 K) also are explored through electron diffraction. The M → I transition is believed tooccur due to the increase of disorder which occurs at high temperature where the short range order state of excess Ti atoms in the van der Waals gapgives rise to a highly disordered amorphous like state. This may lead toshifting of the mobility edge from below the Fermi energy to above the Fermienergy, thus leading to the observed M → I transition.