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Electron Mobility in Heavily Doped Strongly Compensated ZnSe Crystals
Author(s) -
Kasiyan V. A.,
Nedeoglo D. D.,
Simashkevich A. V.,
Timchenko I. N.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221360138
Subject(s) - impurity , electron mobility , condensed matter physics , doping , materials science , hall effect , electron , scattering , exponent , degree (music) , conductivity , atmospheric temperature range , ionized impurity scattering , electrical resistivity and conductivity , chemistry , optics , physics , thermodynamics , linguistics , philosophy , organic chemistry , acoustics , quantum mechanics
In the temperature range 1.65 to 300 K the temperature dependence of the electron mobility is studied in n‐ZnSe crystals with a concentration of electrically active impurities ranging from 7 × 10 15 to 5 × 10 18 cm −3 and a compensation degree of 0.16 to 0.98. The anomalously low values of the electron mobility and its sharp change with temperature by a power law with an exponent 2 to 4 in heavily doped strongly compensated crystals are accounted for by the specific character of conductivity and Hall effect in samples with a random large scale impurity potential rather than by the peculiarities of the electron scattering. The dependence of the electron mobility on the concentration and the degree of impurity compensation is studied.