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Effect of alloy composition on the thermoelectric power in inversion layers on ternary semiconductors in the presence of a classically large magnetic field
Author(s) -
Ghatak K. P.,
Mondal M.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221350242
Subject(s) - ternary operation , semiconductor , condensed matter physics , alloy , seebeck coefficient , magnetic field , thermoelectric effect , inversion (geology) , materials science , ternary alloy , electric field , physics , thermodynamics , optoelectronics , metallurgy , quantum mechanics , geology , computer science , paleontology , structural basin , programming language
An attempt is made to derive in the presence of a classically large magnetic field expressions for the thermoelectric power of the carriers in n‐channel inversion layers on ternary semiconductors under both, weak and strong electric field, limits. It is found, taking n‐channel inversion layers on Hg 1− x Cd x , Te as examples, that the same power, for both the limits, increases with increasing alloy composition. The corresponding results for parabolic semiconductors are also obtained from the expressions derived.