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Quantum properties of the two‐dimensional electron gas in the n‐inversion layers of InSb grain boundaries under high hydrostatic pressure
Author(s) -
Herrmann R.,
Kraak W.,
Nachtwei G.,
Schurig Th.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221350142
Subject(s) - hydrostatic pressure , condensed matter physics , electron , magnetic field , grain boundary , electrical resistivity and conductivity , conduction band , fermi gas , quantum well , quantum hall effect , population , physics , materials science , optics , thermodynamics , quantum mechanics , composite material , laser , microstructure , demography , sociology
The magnetotransport properties of conduction electrons in n‐type inversion layers adjacent to the grain boundary in p‐type InSb bicrystals are investigated under high hydrostatic pressure (up to 10 3 MPa) in magnetic fields up to 15 T. A rapid decrease of the carrier concentration in the inversion layer is observed when hydrostatic pressure is applied. From the quantum oscillations of the magnetoresistivity the characteristic parameters of the electric subbands (subband population n si , subband energies E F — E I , and the effective cyclotron masses m * i ) and their pressure dependences are established. A simple theoretical model taking into account the pressure dependence of the energy band structure of pure InSb is proposed to describe the found experimental‐data. Under high pressures and in high magnetic fields it is verified experimentally that the Hall resistivity gxy is quantized into integer multiples of h/e 2 .