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Self‐consistent calculation of the electronic structure of n‐inversion layers adjacent to the grain boundary in InSb bicrystals
Author(s) -
Gobsch G.,
Paasch G.,
Übensee H.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221350129
Subject(s) - band bending , grain boundary , inversion (geology) , condensed matter physics , doping , electron , materials science , electronic band structure , chemistry , physics , crystallography , quantum mechanics , microstructure , geology , paleontology , structural basin
Self‐consistent calculations on the quantized electron inversion layer adjacent to the grain boundary in p‐doped InSb bicrystals are performed for the first time. A simple model of the fixed positive charge in the grain boundary is applied. Within a self‐consistent approximation scheme, taking into account the band non‐parabolicity, the band bending and the carrier concentrations in vicinity of the grain boundary are calculated. In addition, the calculation of the complete two‐dimensional subband structure is performed. The results are discussed for a wide range of the total electron inversion density n □ = 10 11 to 5 × 10 12 cm −2 . In case that n □ > 2 × 10 11 cm −2 charge self‐consistency is obtained. The theoretical values are compared with experimental ones taken from literature. The quality of the model and of the approximation scheme is demonstrated.