Premium
Anomalous composition dependence of the dielectric constant in bismuth‐antimony alloys due to disorder‐induced indirect interband polarization processes
Author(s) -
Enders P.,
Schuchardt R.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221350121
Subject(s) - antimony , bismuth , dielectric , condensed matter physics , brillouin zone , materials science , valence (chemistry) , scattering , polarization (electrochemistry) , band gap , alloy , thermal conduction , chemistry , optics , physics , metallurgy , optoelectronics , organic chemistry , composite material
The strong increase of the dielectric constant observed at a critical antimony concentration in semiconducting bismuth‐antimony alloys is interpreted in terms of a purely electronic interband polarization enhanced by vanishing of the thermal energy gap. The dominant indirect transitions between conduction and valence band states near the L‐ and T‐points of the Brillouin zone are considered as induced by the short‐range scattering potential due to the chemical disorder of the alloy. Reasonable system parameters allow for a satisfactory fit to the experimental data.