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The temperature dependence of the AC hopping conductivity of lightly compensated semiconductors
Author(s) -
Klimkovich B. V.,
Poklonski N. A.,
Stelmakh V. F.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221340237
Subject(s) - condensed matter physics , anisotropy , semiconductor , conductivity , materials science , electrical resistivity and conductivity , frequency dependence , chemistry , nuclear magnetic resonance , physics , optoelectronics , optics , quantum mechanics
The temperature dependence of the ac hopping conductivity of lightly compensated semiconductors is explained by taking into account the transitions of a hole within three donor clusters. The effect of the defect wave function anisotropy is discussed. The anisotropy does not change the temperature and frequency dependence of the conductivity. The results are compared with experimental data on Si:P and Ge:P.