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Effect of chemical and spin disorder on shallow impurity states in semiconductor alloys
Author(s) -
Mycielski J.,
Witowski A. M.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221340227
Subject(s) - condensed matter physics , semiconductor , impurity , isotropy , spin (aerodynamics) , hamiltonian (control theory) , magnetic semiconductor , spin polarization , materials science , chemistry , physics , doping , quantum mechanics , thermodynamics , electron , mathematical optimization , mathematics
The effect of chemical and spin disorder in semiconductor alloys, in particular in semimagnetic semiconductors (diluted magnetic semiconductors), on shallow donor states is discussed in detail. Assuming short‐range composition and spin correlations, and the isotropy of spin–spin interaction, the averages of products of the matrix elements of the disorder Hamiltonian are calculated. The theory is applied to the problem of ground‐state spin‐splitting and spin‐flip transitions, as well as to Is → 2s transitions.