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Improvement of debye‐hückel evaluation of free carrier screening effects in semiconductors
Author(s) -
Farvacque J. L.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221340144
Subject(s) - free carrier , debye–hückel equation , semiconductor , range (aeronautics) , debye , dielectric function , dielectric , condensed matter physics , materials science , statistical physics , physics , quantum mechanics , electrode , electrolyte , composite material
Most of the applications of the “energy loss” method for free carrier mobility calculations are based on Debye‐Hückel approximation for the evaluation of the free carrier screening properties. However, it is well known that, indeed, this approximation is fully available in a relatively high temperature range. The aim of this paper is to estimate, from Lindhard's dielectric function and in the effective mass approach some corrective terms which allow us to improve this approximation and consequently to extend the range of applicability of mobility calculations by the “energy loss” method.