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Capture of majority carriers by a semiconductor surface
Author(s) -
Vardanyan R. A.,
Khovakimyan L. B.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221340138
Subject(s) - semiconductor , surface (topology) , phonon , free carrier , semiconductor materials , materials science , condensed matter physics , optoelectronics , physics , mathematics , geometry
The coefficient of majority carrier capture by a semiconductor surface is calculated in quasi‐classical approximation. The carrier localization on the surface is accompanied by multiquantum fluctuational phonon emission. The temperature dependence of the capture coefficient is obtained.
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