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Spontaneous hall effect and magnetization of Fe–(B, Zr) and Co– Mo amorphous films
Author(s) -
Stobiecki T.,
Pbzybylski M.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221340117
Subject(s) - ferromagnetism , magnetization , condensed matter physics , magnetic moment , atom (system on chip) , hall effect , amorphous solid , materials science , hyperfine structure , electron , amorphous metal , free electron model , electrical resistivity and conductivity , magnetic field , chemistry , atomic physics , physics , crystallography , quantum mechanics , computer science , embedded system
Amorphous Fe 1 – x (B, Zr) x and Co 1 ‐ x (B, M.o) x films are prepared by the rf sputtering technique over a wide range of concentration where the alloys show ferromagnetism. From the magnetization and mean hyperfine field values at low temperatures the magnetic moment of Fe(μFe) is determined. Using a rigid‐band model the charge transfer per ß and Zr atom to the Fe d‐band is calculated. The best fits are obtained for a charge transfer of 1.48 electrons per ß atom and of 1.8 electrons per Zr atom, yielding the observed critical concentrations at which ferromagnetism disappears: xc = 0.6 and Xc = 0.5 for FeB and FeZr films, respectively. From spontaneous Hall effect and resistivity (ϱ) measurements it is obtained thatR s ∼ ϱ n in a wide range of concentrations with an exponent n = 1.97. The side jump parameter (Δy) calculated from the free‐electron Berger formula decreases with increasing concentration of non‐magnetic elements of the alloy. This tendency is similar as in the case of magnetic moment. The observed correlation between Δy and μFe shows that both parameters are of the same origin.