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Phonon density of states in amorphous Si 0.5 Ge 0.5
Author(s) -
Gupta H. C.,
Reddy G. S. N.,
Tripathi B. B.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221340103
Subject(s) - phonon , raman spectroscopy , amorphous solid , condensed matter physics , density of states , materials science , force constant , germanium , phase (matter) , silicon , crystallography , physics , chemistry , optics , molecule , quantum mechanics , metallurgy
The angular force model is used to investigate phonon density of states of a‐Si 0.5 Ge 0.5 by considering only the first nearest neighbour interactions. A force constant decrease of the order of only 5% is observed when the phase changes from crystalline to amorphous system. The relevance of the obtained results to the Raman spectra is discussed.