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On the mechanism of charge carrier scattering in germanium with point defects under cyclotron resonance
Author(s) -
Gataiskaya V. I.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221330255
Subject(s) - germanium , cyclotron resonance , physics , point (geometry) , semiconductor , scattering , cyclotron , condensed matter physics , library science , engineering physics , nuclear physics , computer science , silicon , quantum mechanics , mathematics , electron , optoelectronics , geometry