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The influence of an electric field on the mobility in semiconductors
Author(s) -
Burghardt H.,
Frauenheim T.,
Hamann C.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221330238
Subject(s) - drift velocity , electric field , phonon , monte carlo method , condensed matter physics , physics , field dependence , field (mathematics) , scattering , polar , semiconductor , phonon scattering , electron mobility , saturation velocity , quantum mechanics , mathematics , statistics , magnetic field , pure mathematics
Analytical expressions for the electric field dependence of the mobility μ and the mean drift velocity (〈 v D 〉) are derived in stationary equilibrium taking into account acoustical phonon, nonpolar optical phonon, and polar optical phonon scattering. Using these expressions an analytic relation for the field dependence of the total mean drift velocity for GaAs is found, which besides the field dependence well accounts for the temperature dependence of the experimental data and results obtained from Monte‐Carlo calculations.