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The origin of the minority impurity states in heavily doped semiconductors
Author(s) -
Domanevskii D. S.,
Krasovskii V. V.,
Prokopenya M. V.,
Vilkotskii V. A.,
Zhokhovets S. V.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221330231
Subject(s) - impurity , semiconductor , doping , condensed matter physics , gaussian , position (finance) , crystal (programming language) , materials science , band gap , atomic physics , physics , optoelectronics , quantum mechanics , finance , computer science , economics , programming language
The influence is examined of growth conditions of heavily doped n‐type semiconductors on the width and energy position of Gaussian‐shape impurity band where non‐equilibrium holes are localized. The energy levels of the impurity band are shown to be caused by associations of oppositely charged crystal imperfections (so‐called associates) including several shallow donor impurity atoms and a deep structural defect. The reason of Gaussian broadening of these states is a random spatial arrangement of associated imperfections about each other within a given associate.