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Twofold coordinated Si and Ge atoms and “hydrogen” paramagnetic centers in amorphous SiO 2 and GeO 2
Author(s) -
Radtsig V. A.,
Bobyshev A. A.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221330223
Subject(s) - paramagnetism , silicon , amorphous solid , germanium , hydrogen , materials science , crystallography , amorphous silicon , atomic physics , chemistry , condensed matter physics , physics , crystalline silicon , optoelectronics , organic chemistry
A new type of intrinsic structure defects in amorphous SiO, and GeO, – twofold coordinated siliconand germanium– is identified. In the reaction with H(D)atoms they convert to paramagnetic centers. The electron structure, geometry, and chemical properties of these centers are analyzed.
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