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Nature of deep luminescence centres in CdSe and CdSe x Te 1– x
Author(s) -
Ermolovich I. B.,
Milenin V. V.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221330222
Subject(s) - luminescence , quenching (fluorescence) , excitation , lattice (music) , radiative transfer , materials science , atomic physics , ion , molecular physics , fluorescence , chemistry , physics , optoelectronics , optics , organic chemistry , quantum mechanics , acoustics
Both, the dependences of the luminescence intensities of the bands with λ m = 920 and 1160nm at 77 K in CdSe and the corresponding bands in CdSe x Te 1 – x ( x = 0 to 1) on temperature and the dependences of band intensities on excitation level measured at low temperatures and at the temperatures from the ranges of band quenching are investigated. Obtained data enable conclusion to be made about both band quenching mechanisms: the “external” mechanism is valid for the 920 nm bands and the “internal” one is valid for the 1160nm bands. The parameters of electron‐phonon interactions at radiative carrier capture on investigated centres are obtained and the configuration coordinate models for both types of centres are constructed. Different mechanisms are shown to be caused by the differences of chemical nature and geometrical configuration of the 920 and 1160 nm centres. It is shown also that the process of the nearest anion altering of the emission centre causes the change of its interaction with lattice.