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Effect of thin space‐charge layers on exciton reflectance
Author(s) -
Kiselev V. A.,
Novikov B. V.,
Cherednichenko A. E.,
Ubushiev E. A.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221330218
Subject(s) - exciton , electric field , space charge , reflection (computer programming) , reflectivity , semiconductor , thin film , materials science , depletion region , charge (physics) , electron , resonance (particle physics) , condensed matter physics , field (mathematics) , atomic physics , optics , physics , optoelectronics , nanotechnology , quantum mechanics , programming language , mathematics , computer science , pure mathematics
Resonance reflectance in semiconductors in the frequency region of exciton transitions depends strongly on characteristics of the near‐surface space‐charge layers. It is shown by numerical computation that the majority of the exciton reflection lineshapes observed on CdS earlier may be explained by the presence of a thin (10 to 100 nm) space‐charge layer with a relatively high (10 4 to 10 5 V/cm) surface electric field. Various treatments of surfaces alter charges on and below them thus modifying the electric field distribution. The latter causes changes in the exciton reflectance. Transformations of the exciton lineshapes under the action of illumination and electron bombardment are discussed in detail for the case of CdS. The lineshapes show drastic variations with expositions of both influences. In a single experiment one may observe all of the anomalies typical for the thin space‐charge layers.