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Quantum theory of free‐carrier absorption in quasi‐two‐dimensional semiconducting structures
Author(s) -
Giner C. Tballeeo,
Antón M.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221330217
Subject(s) - phonon , free carrier absorption , heterojunction , attenuation coefficient , condensed matter physics , materials science , free carrier , absorption (acoustics) , semiconductor , polar , piezoelectricity , quantum , quantum well , thin film , optoelectronics , optics , physics , nanotechnology , quantum mechanics , composite material , laser
The quantum theory of free carrier absorption in quasi‐two‐dimensional structures like thin films, layered heterojunctions, and inversion layers is generalized to the cases when the carriers are scattered by polar optical phonons, piezoelectric phonons, and nonpolar optical phonons. The obtained results are compared with those of the quantum theory of free‐carrier absorption in a bulk semiconductor and it is found that the absorption coefficient increases when the width of the layer or thin film decreases in all the cases.