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Computer simulation of proton channeling catch‐up in bent crystals
Author(s) -
Taratin A. M.,
Vorobiev S. A.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221330210
Subject(s) - bent molecular geometry , proton , beam (structure) , radius , bend radius , crystal (programming language) , bending , silicon , angle of incidence (optics) , materials science , atomic physics , physics , optics , nuclear physics , computer science , optoelectronics , composite material , computer security , programming language
Abstract A detailed computer simulation of the catch‐up effect for a 1 GeV proton beam in a uniformly bent silicon crystal is performed. The dependences of the efficiency of proton catch‐up in the channeling regime on bending radius of the crystal and on incidence angle of the beam are reported.