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Quantum hall effect in the inversion layer of p‐type InSb bicrystals under high hydrostatic pressure
Author(s) -
Kraak W.,
Nachtwei G.,
Herrmann R.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221330147
Subject(s) - hydrostatic pressure , condensed matter physics , quantum hall effect , hall effect , electrical resistivity and conductivity , inversion (geology) , hydrostatic equilibrium , magnetic field , materials science , quantum well , high pressure , physics , geology , optics , thermodynamics , quantum mechanics , paleontology , laser , structural basin
The properties of a two‐dimensional electronic system in n‐inversion layers in grain boundaries of p‐InSb bicrystals are investigated under high hydrostatic pressure (up to 10 3 MPa) in high magnetic fields (up to 14 T). A rapid decrease of the carrier concentration in the inversion layer is observed when hydrostatic pressure is applied. At high pressures and high magnetic fields it is experimentally verified that the Hall resistivity ϱ xy is quantized into integer multiplies of h / e 2 .