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Calculation of the charge carrier mobility of a size quantized semiconductor film by the energy‐loss method
Author(s) -
Vartanian A. L.,
Kirakosian A. A.
Publication year - 1986
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221330145
Subject(s) - electron , scattering , semiconductor , boltzmann constant , dielectric , boltzmann equation , physics , impurity , condensed matter physics , dielectric function , electron mobility , computational physics , quantum mechanics
Abstract An energy‐loss‐method formalism applicable to a thin quantized film is developed. Within the frame of a self‐consistent field and taking into account the “imaginary” charges in the film surrounding regions the expression for a film dielectric function is derived and, in the long‐wavelength limit the analytical form of its imaginary part is found for a simple model of a size quantized film. Under the condition that the electron gas is nondegenerate and only the first subband is filled, the mobility is calculated, when an electron‐ionized impurity scattering is taken into account, and compared with the relevant Boltzmann expression.